Plasma Enhanced Chemical Vapor Deposition (PECVD)
Plasma Enhanced Chemical Vapor Deposition (PECVD)
Trion Technology Orion III
The Orion III PECVD system is designed to supply research laboratories with state-of-the-art plasma etch capability for single wafers and small samples. Our PECVD system has four process gases for deposition of films such as silicon dioxide, silicon nitride and polysilicon. The system is controlled by a user-friendly touch screen computer system. Recipes may be stored on the computer for repeated runs under the same conditions.
Specifications:
Max RF power: 300 W
Max wafer size: 5”
Max stage temp. 350oC
Gases available: O2, SiH4 5%/N2, N2, CF4
Max RF power: 300 W
Max wafer size: 5”
Max stage temp. 350oC
Gases available: O2, SiH4 5%/N2, N2, CF4
